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PS2561L-1 - GaAs light emitting diode and an NPN silicon phototransistor

Download the PS2561L-1 datasheet PDF (PS2561-1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gaas light emitting diode and an npn silicon phototransistor.

Description

The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount.

The PS2561L1-1 is wide lead bending type.

Features

  • High isolation voltage (BV = 5 000 Vr. m. s. ).
  • High collector to emitter voltage (VCEO = 80 V).
  • High current transfer ratio (CTR = 200% TYP. ).
  • High-speed switching (tr = 3 s TYP. , tf = 5 s TYP. ).
  • Ordering number of taping product: PS2561L-1-F3 : 2 000 pcs/reel : PS2561L2-1-F3 : 2 000 pcs/reel.
  • Pb-Free product.
  • Safety standards.
  • UL approved: UL1577, Double protection.
  • CSA approved: CAN/CSA-C22.2 No. 62368-1, Reinforced insulation.
  • BSI approved: B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PS2561-1-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PS2561L-1
Manufacturer Renesas
File Size 5.11 MB
Description GaAs light emitting diode and an NPN silicon phototransistor
Datasheet download datasheet PS2561L-1 Datasheet

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Full PDF Text Transcription

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PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE Data Sheet R08DS0207EJ0100 Rev.1.00 Dec 25, 2020 DESCRIPTION The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount. The PS2561L1-1 is wide lead bending type. The PS2561L2-1 is wide lead bending type for surface mount. FEATURES  High isolation voltage (BV = 5 000 Vr.m.s.)  High collector to emitter voltage (VCEO = 80 V)  High current transfer ratio (CTR = 200% TYP.)  High-speed switching (tr = 3 s TYP., tf = 5 s TYP.
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