* Logic level
* Built-in gate protection diode
* Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.

ORDERING INFORMATION PART NUMBER NP90N06VLG-E1-AY Note NP90N06VLG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tap.

The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N06VLG-E1-AY Note NP90N06VLG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-fr.

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