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NP90N03VHG Datasheet, Renesas

NP90N03VHG transistor equivalent, mos field effect transistor.

NP90N03VHG Avg. rating / M : 1.0 rating-11

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NP90N03VHG Datasheet

Features and benefits


* Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
* Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)
* Designed for.

Application

Features
* Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
* Low input capacitance ⎯ Ci.

Description

The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
* Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = .

Image gallery

NP90N03VHG Page 1 NP90N03VHG Page 2 NP90N03VHG Page 3

TAGS

NP90N03VHG
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

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