* Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)
* Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)
* Designed for automotive applicati.

Features
* Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)
* Low Ciss: Ciss = 4900 .

These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features
* Super low on-state resistance RDS(on) = 3.8 m MAX. (VGS = 10 V, ID = 45 A)
* Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)

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