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NP83P06PDG Datasheet, Renesas

NP83P06PDG mosfet equivalent, p-channel power mosfet.

NP83P06PDG Avg. rating / M : 1.0 rating-12

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NP83P06PDG Datasheet

Features and benefits


* Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A )
* Low input capacitance .

Application

Features
* Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max..

Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5.

Image gallery

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TAGS

NP83P06PDG
P-channel
Power
MOSFET
Renesas

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