NP83P06PDG mosfet equivalent, p-channel power mosfet.
* Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A )
* Low input capacitance .
Features
* Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max..
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5.
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