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NP80N055PDG, NP80N055MDG Datasheet - Renesas

NP80N055PDG N-CHANNEL POWER MOS FET

The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) P.

NP80N055PDG Features

* Logic level

* Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

NP80N055PDG, NP80N055MDG Datasheet

This datasheet PDF includes multiple part numbers: NP80N055PDG, NP80N055MDG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

NP80N055PDG, NP80N055MDG

Manufacturer:

Renesas ↗

File Size:

287.04 KB

Description:

N-channel power mos fet.

This datasheet PDF includes multiple part numbers: NP80N055PDG, NP80N055MDG.
Please refer to the document for exact specifications by model.

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NP80N055PDG NP80N055MDG N-CHANNEL POWER MOS FET Renesas

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