NP80N04MDG datasheet, fet equivalent, Renesas

Features and benefits

* Logic level
* Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35.

Application

ORDERING INFORMATION PART NUMBER NP80N04MDG-S18-AY Note NP80N04NDG-S18-AY Note NP80N04PDG-E1B-AY Note NP80N04PDG-E2B-.

Description

The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MDG-S18-AY Note NP80N04NDG-S18-AY Note NP80N04PDG-E1B-AY Note NP80N04PDG.

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