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NP55N055SDG Datasheet, Renesas

NP55N055SDG transistor equivalent, mos field effect transistor.

NP55N055SDG Avg. rating / M : 1.0 rating-12

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NP55N055SDG Datasheet

Features and benefits


* Channel temperature 175 degree rating
* Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
* Low Ciss: Ciss = 3200 pF TYP.
* L.

Application

ORDERING INFORMATION PART NUMBER PACKAGE NP55N055SDG TO-252 (MP-3ZK) FEATURES
* Channel temperature 175 degre.

Description

The NP55N055SDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP55N055SDG TO-252 (MP-3ZK) FEATURES
* Channel temperature 175 degree rating
* Super low.

Image gallery

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TAGS

NP55N055SDG
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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