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NP55N04SLG Datasheet, Renesas

NP55N04SLG transistor equivalent, mos field effect transistor.

NP55N04SLG Avg. rating / M : 1.0 rating-11

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NP55N04SLG Datasheet

Features and benefits


* Channel temperature 175 degree rating
* Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID =.

Application

Features
* Channel temperature 175 degree rating
* Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS .

Description

The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Channel temperature 175 degree rating
* Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(.

Image gallery

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TAGS

NP55N04SLG
MOS
FIELD
EFFECT
TRANSISTOR
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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