NP55N04SLG transistor equivalent, mos field effect transistor.
* Channel temperature 175 degree rating
* Super low on-state resistance
⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID =.
Features
* Channel temperature 175 degree rating
* Super low on-state resistance
⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS .
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Channel temperature 175 degree rating
* Super low on-state resistance
⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(.
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