NP50P06KDG mosfet equivalent, p-channel power mosfet.
* Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m Max. ( VGS = -4.5 V, ID = -25 A )
* Low input capacitance : Cis.
Features
* Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m Max. ( .
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m Max. ( VGS = -4.5 V, ID = -25 A )
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