NP50P03YDG transistor equivalent, mos field effect transistor.
* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
* Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
* Designed for automotive.
Features
* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
* Low Ciss: Ciss = 2300 pF.
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
* Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS =.
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