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NP36P06KDG Datasheet, Renesas

NP36P06KDG mosfet equivalent, p-channel power mosfet.

NP36P06KDG Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 1.31MB)

NP36P06KDG Datasheet
NP36P06KDG
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 1.31MB)

NP36P06KDG Datasheet

Features and benefits


* Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A )
* Low input capacitance :.

Application

Features
* Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max.

Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 .

Image gallery

NP36P06KDG Page 1 NP36P06KDG Page 2 NP36P06KDG Page 3

TAGS

NP36P06KDG
P-channel
Power
MOSFET
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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