NP36P06SLG datasheet, mosfet equivalent, NEC

Features and benefits

* Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
* Low input capacitance Ciss = 32.

Application

FEATURES
* Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS.

Description

The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)

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