NP29N04QUK Datasheet | Renesas

Description NP29N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features - Super low on-state resistance  RDS(on) = 10.1 m MAX. (VGS = 10 V, ID = 15 A) - Low Ciss: Ciss = 1000 p F TYP. (VDS = 25 V) - Designed for automotive application and AEC-Q101 qualified - Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. Lead Plating Packing NP29N04QUK-E1-AY - 1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) NP29N04QUK -E2-AY - 1 Taping (E2 type) Note: - 1. Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON dual R07DS1329EJ0200 Rev. 2.00 May 24, 2018 Page 1 of 7 Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) 4 Drain Current (pulse) 1, 4, 5 Total Power Dissipation (TC = 25C) 4 Total Power Dissipation (TA = 25C) 2, 4 Channel Temperature Storage Temperature Repetitive Avalanche Current 3, 5 Repetitive Avalanche Energy 3, 5 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±30 ±60 44 1.0 175 - 55 to 175 17 30 Unit V V A A W W C C A m J Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance 2 Rth(ch-C) - 5 Rth(ch-A) - 5 3.37 150 C/W C/W Notes: - 1. TC = 25°C, PW  10 s, Duty Cycle ...