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NP29N04QUK Datasheet Renesas

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Renesas · NP29N04QUK File Size : 469.77KB · 1 hits

Features and Benefits


 Super low on-state resistance  RDS(on) = 10.1 m MAX. (VGS = 10 V, ID = 15 A)
 Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
 Designed for automotive application and AEC-Q101 qualified
 Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cau.

NP29N04QUK NP29N04QUK NP29N04QUK
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Dual
N-channel
Power
MOSFET
NP29N04QUK
NP29N06QDK
NP29N06QUK
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