NP29N04QUK
Overview
NP29N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
- Super low on-state resistance RDS(on) = 10.1 m MAX. (VGS = 10 V, ID = 15 A)
- Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
