* Channel temperature 175 degree rating
* Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 5.

ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note N.

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE INFORMATIO.

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