NE5550779A - Silicon Power LDMOS FET

Name: NE5550779A
SKU: NE5550779A-744476

Renesas

The NE5550779A by Renesas is a Silicon Power LDMOS FET. Below is the official datasheet preview.

Datasheet Details

Part number	NE5550779A
Manufacturer	Renesas
File Size	3.15 MB
Description	Silicon Power LDMOS FET
Datasheet	NE5550779A_Renesas.pdf
Additional preview pages of the NE5550779A datasheet.

High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm).
High ESD tolerance.
Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Published: Nov 10, 2013 |