N0604N datasheet, mosfet equivalent, Renesas

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Features and benefits

* Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
* Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
* High current ID.

Application

R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Features
* Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = .

Description

The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Features
* Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
* Low input capacit.

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