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N0603N - N-CHANNEL MOSFET

General Description

The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current ID(DC) = ±100 A.
  • RoHS Compliant Ordering Information Part No. N0603N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-262 1.8 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Dr.

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Datasheet Details

Part number N0603N
Manufacturer Renesas
File Size 232.04 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet N0603N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet N0603N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0603N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-262 1.8 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.