Datasheet4U Logo Datasheet4U.com

K3115B - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The 2SK3115B is N-Channel MOS FET device that

Features

  • a low gate charge and excellent switching characteristics, and designed for high voltage.

📥 Download Datasheet

Datasheet preview – K3115B

Datasheet Details

Part number K3115B
Manufacturer Renesas
File Size 271.10 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet K3115B Datasheet
Additional preview pages of the K3115B datasheet.

📁 Similar Datasheet

  • K3115 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • K3113 - 2SK3113 (NEC)
  • K3114 - 2SK3114 (NEC)
  • K3116 - 2SK3116 (NEC)
  • K3100G - 3.3V Crystal Clock Oscillators (Champion)
  • K3102-01R - 2SK3102-01R (Fuji Semiconductors)
  • K3126 - 2SK3126 (Toshiba Semiconductor)
  • K3128 - 2SK3128 (Toshiba Semiconductor)
  • K3140 - 2SK3140 (Hitachi Semiconductor)
  • K3142 - 2SK3142 (Hitachi Semiconductor)
Other Datasheets by Renesas
  • K3141 - Silicon N-Channel MOS FET
  • K3155 - Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3115B-S17-AY Note Isolated TO-220 Note Pb-free (This product does not contain Pb in External electrode.) FEATURES • Low gate charge QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating : ±30 V • Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.
Published: |