HAF2017L fet equivalent, silicon n-channel power mos fet.
* Logic level operation (4 to 6 V Gate drive)
* High endurance capability against to the short circuit
* Built-in the over temperature shutdown circuit
* .
This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction te.
Image gallery
TAGS
Download (Size : 121.57KB)