H7N1005DS fet equivalent, silicon n-channel mos fet.
* Low on-resistance RDS (on) = 85 mΩ typ.
* Low drive current
* Capable of 4.5 V gate drive
Outline
REJ03G1736-0100 Rev.1.00
Sep 19, 2008
RENESAS Package co.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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