H7N1002AB switching equivalent, silicon n channel mos fet high speed power switching.
* Low on-resistance RDS(on) = 8 mΩ typ.
* Low drive current
* Available for 4.5 V gate drive
Outline
TO-220AB
D
G
S
1 2 3
1. Gate 2. Drain (Flange) 3. S.
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