H5N5016PL-E0-E datasheet, mosfet equivalent, Renesas

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Features and benefits

* Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching
* Built-in fast recovery dio.

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TAGS

H5N5016PL-E0-E

MOSFET

Renesas

Manufacturer

Renesas (https://www.renesas.com/)

Related datasheet

H5N5016PL-E0-E Datasheet, Renesas

Features and benefits