H5N5005PL fet equivalent, silicon n-channel mos fet.
* Low on-resistance: RDS(on) = 0.070 Ω typ.
* Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
* High speed switching: tf = 300 ns typ (at VGS = 10 V, I.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
Image gallery
TAGS
Download (Size : 128.20KB)