22N055 mosfet equivalent, n-channel power mosfet.
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
* Low Ciss : Ciss = 590 pF TYP.
* Bui.
FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10.
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
* Lo.
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