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Unisonic Technologies

22N65 Datasheet Preview

22N65 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
22N65
Preliminary
HEXFET POWER MOSFET
Power MOSFET
„ DESCRIPTION
As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
1
„ FEATURES
TO-247
* RDS(ON) = 350
* Ultra low gate charge ( Typical 150 nC )
* Low reverse transfer capacitance ( CRSS = typical 36 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
„ ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
22N65L-T47-T
22N65G-T47-T
Package
TO-247
Pin Assignment
123
GDS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-466.a




Unisonic Technologies

22N65 Datasheet Preview

22N65 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

22N65
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650 V
Gate-Source Voltage
VGSS
±30 V
Avalanche Current
IAR 22 A
Continuous Drain Current
ID
22 A
Pulsed Drain Current (Note 1)
IDM
88 A
Avalanche Energy
Single Pulsed
Repetitive
EAS
EAR
380 mJ
37 mJ
Peak Diode Recovery dv/dt (Note 2)
dv/dt
18 V/ns
Power Dissipation
PD 370 W
Junction Temperature
TJ 150 °C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. ISD 22A, di/dt 540 A/μs, VDD V(BR)DSS, TJ 150°C.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
Junction to Case
θJA 40 °C /W
θJC 0.34 °C /W
„ ELECTRICAL CHARACTERISTICS
(TJ =25°C, L = 1.5mH, RG=25, IAS = 22A. Unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
IGSS
ΔBVDSS/ΔTJ
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VDS=0V, VGS=±30V
ID=1mA,
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=13A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=300V, ID=22A, RG=6.2
VGS=10V (Note 2)
VDS=480V, VGS=10V, ID=22A
(Note 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=22A
Continuous Source Current
www.Dat(aBSohdeyetD4iUod.ceo)m(Note 1)
IS
Pulsed Source Current (Body Diode)
ISM
Reverse Recovery Time
tRR IS=22A,
Reverse Recovery Charge
QRR di/dt=100A/μs (Note 2)
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse Width 300 s, Duty Cycle 2%.
MIN TYP MAX UNIT
650 V
50 µA
±100 nA
0.30 V/°C
2.0 4.0 V
0.3 0.35
3570
350
36
pF
pF
pF
26 ns
99 ns
48 ns
37 ns
150 nC
45 nC
76 nC
1.5 V
22 A
88 A
590 890 ns
7.2 11 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-466.a


Part Number 22N65
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 5 Pages
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