* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤1.3Ω)
* Low Gate Charge(Typical Data:24nC)
* Low Reverse Transfer Capacitances(Ty.

* Used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circu.

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts