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5N60 - 5A 600V N-channel Enhancement Mode Power MOSFET

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤1.7Ω).
  • Low Gate Charge(Typical:19.5nC).
  • Low Reverse Transfer Capacitances(Typical:7.5pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

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Datasheet Details

Part number 5N60
Manufacturer ROUM
File Size 1.42 MB
Description 5A 600V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet 5N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.4Ω ID = 5A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor.
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