30H10I mosfet equivalent, 100a 30v n-channel enhancement mode power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge(Typical:43nC)
* Low Reverse Transfer Capacitance(Typical:215pF)
* 100% Single Puls.
* Power switching applications
* Inverter management system
* Electric Tools
* Automotive Electronics
V.
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge(.
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