30H10K - N-Channel Enhancement Mode Power MOSFET

Description

The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =100A RDS(ON).

📥 Download Datasheet

30H10K n-channel enhancement mode power mosfet by TGD - Datasheet Preview

Datasheet Details

Part number	30H10K
Manufacturer	TGD
File Size	1.18 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	30H10K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
30H10K	100A 30V N-channel Enhancement Mode Power MOSFET	ROUM
30H10K	N-Channel Trench Power MOSFET	FUMAN
30H10I	100A 30V N-channel Enhancement Mode Power MOSFET	ROUM
30H150	N-Channel MOSFET	FNK
30H80	N-Channel Enhancement Mode MOSFET	FNK

Other Datasheets by TGD

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TGD30H10K General Features ● VDS =30V,ID =100A RDS(ON) <5.