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RGTV60TS65D - Field Stop Trench IGBT

Key Features

  • 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant.
  • Outline TO-247N.
  • Inner Circuit (2) (1)(2)(3).
  • 1 (1) (3) (1) Gate (2) Collector (3) Emitter.
  • 1 Built in FRD.

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Datasheet Details

Part number RGTV60TS65D
Manufacturer ROHM
File Size 1.18 MB
Description Field Stop Trench IGBT
Datasheet download datasheet RGTV60TS65D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RGTV60TS65D 650V 30A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 30A 1.