RGTV00TK65D - Field Stop Trench IGBT

ROHM

Features

) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Built in Very Fast & Soft Recovery FRD 4) Pb - free Lead Plating ; RoHS Compliant.
Outline TO-3PFM.
Inner Circuit (2) (1)(2)(3).
1 (1) (3) (1) Gate (2) Collector (3) Emitter.
1 Built in FRD.

Part Number	Description	Manufacturer

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RGTV00TK65D 650V 50A Field Stop Trench IGBT Datasheet VCES IC (100℃) VCE(sat) (Typ.) PD 650V 26A 1.

Published: May 9, 2019 |