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RGTV60TS65 - Field Stop Trench IGBT

Key Features

  • 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Pb - free Lead Plating ; RoHS Compliant.
  • Outline TO-247N.
  • Inner Circuit (1)(2)(3) (2) (1) (3) (1) Gate (2) Collector (3) Emitter.

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Datasheet Details

Part number RGTV60TS65
Manufacturer ROHM
File Size 947.94 KB
Description Field Stop Trench IGBT
Datasheet download datasheet RGTV60TS65 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RGTV60TS65 650V 30A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 30A 1.