Datasheet4U Logo Datasheet4U.com

R8003KND3 - Power MOSFET

Features

  • 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackage TO-252 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 l.

📥 Download Datasheet

Datasheet Details

Part number R8003KND3
Manufacturer ROHM
File Size 1.46 MB
Description Power MOSFET
Datasheet download datasheet R8003KND3 Datasheet

📁 Similar Datasheet

  • R8002ANJ - N-Channel MOSFET (INCHANGE)
  • R8002ANX - N-Channel MOSFET (INCHANGE)
  • R8005ANJ - N-Channel MOSFET (INCHANGE)
  • R8005ANX - N-Channel MOSFET (INCHANGE)
  • R8008ANJ - N-Channel MOSFET (INCHANGE)
  • R8008ANX - N-Channel MOSFET (INCHANGE)
  • R8010ANX - N-Channel MOSFET (INCHANGE)
  • R80186 - High Integration 16 Bit Microprocessors (AMD)
  • R80186 - High Integration 16 Bit Microprocessors (Intel)
Other Datasheets by ROHM

Full PDF Text Transcription

Click to expand full text
R8003KND3 　　Nch 800V 3A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 1.8Ω ±3A 48W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackage TO-252 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lMarking specification Marking R8003KND3 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 800 V ±3 A ±9 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse IAS EAS*3 0.
Published: |