Datasheet4U Logo Datasheet4U.com

R8001CND - Power MOSFET

Features

  • 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant lOutline TO-252 SC-63 CPT3 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 l.

📥 Download Datasheet

Datasheet Details

Part number R8001CND
Manufacturer ROHM
File Size 2.83 MB
Description Power MOSFET
Datasheet download datasheet R8001CND Datasheet

📁 Similar Datasheet

  • R8002ANJ - N-Channel MOSFET (INCHANGE)
  • R8002ANX - N-Channel MOSFET (INCHANGE)
  • R8005ANJ - N-Channel MOSFET (INCHANGE)
  • R8005ANX - N-Channel MOSFET (INCHANGE)
  • R8008ANJ - N-Channel MOSFET (INCHANGE)
  • R8008ANX - N-Channel MOSFET (INCHANGE)
  • R8010ANX - N-Channel MOSFET (INCHANGE)
  • R80186 - High Integration 16 Bit Microprocessors (AMD)
  • R80186 - High Integration 16 Bit Microprocessors (Intel)
Other Datasheets by ROHM

Full PDF Text Transcription

Click to expand full text
R8001CND 　　Nch 800V 1A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 800V 8.7Ω ±1A 36W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free plating ; RoHS compliant lOutline TO-252 SC-63 CPT3 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking R8001C lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 800 V Continuous drain current (Tc = 25°C) ID*1 ±1 A Pulsed drain current IDP*2 ±4 A Gate - Source voltage VGSS ±25 V Avalanche current, single pulse IAS*3 0.
Published: |