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Rohm Semiconductor Electronic Components Datasheet

BR24T08FVJ-W Datasheet

I2C BUS EEPROM

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Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24T08-W
General Description
BR24T08-W is a serial EEPROM of I2C BUS Interface Method
Features
Packages W(Typ) x D(Typ) x H(Max)
Completely conforming to the world standard I2C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
Other devices than EEPROM can be connected to
the same port, saving microcontroller port
1.6V to 5.5v Single Power Source Operation most
suitable for battery use
1.6V to 5.5V wide limit of operating voltage, possible
FAST MODE 400kHz operation
Page Write Mode useful for initial value write at
factory shipment
Self-timed Programming Cycle
Low current Consumption
Prevention of Write Mistake
Write (Write Protect) Function added
Prevention of Write Mistake at Low Voltage
More than 1 million write cycles
More than 40 years data retention
Noise filter built in SCL / SDA terminal
Initial delivery state FFh
DIP-T8
9.30mm x 6.50mm x 7.10mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
MSOP8
2.90mm x 4.00mm x 0.90mm
SOP-J8A
4.90mm x 6.00mm x 1.75mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
BR24T08-W
Capacity Bit Format
Type
BR24T08-W
BR24T08F-W
BR24T08FJ-W
BR24T08FJ-WSGN
8Kbit
1K×8 BR24T08FV-W
BR24T08FVT-W
BR24T08FVJ-W
BR24T08FVM-W
BR24T08NUX-W
SSOP-B8
3.00mm x 6.40mm x 1.35mm
Figure 1.
Power Source
Voltage
Package
DIP-T8
SOP8
SOP-J8
SOP-J8A
1.6V to 5.5V
SSOP-B8
TSSOP-B8
TSSOP-B8J
MSOP8
VSON008X2030
Product structureSilicon monolithic integrated circuit
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/35
TSZ02201-0R2R0G100100-1-2
31.Aug.2017 Rev.006


Rohm Semiconductor Electronic Components Datasheet

BR24T08FVJ-W Datasheet

I2C BUS EEPROM

No Preview Available !

BR24T08-W
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature Topr
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
800 (DIP-T8)
-65 to +150
-40 to +85
Input Voltage/
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
Tjmax
VESD
-0.3 to Vcc+1.0
150
-4000 to +4000
Datasheet
Unit
V
mW
°C
°C
V
°C
Remark
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 8.0mW/°C when operating above Ta=25°C
The Max value of input voltage / output voltage is not over 6.5V.
When the pulse width is 50ns or less the Min value of input voltage /
output voltage is not lower than -0.8V.
Junction temperature at the storage condition
V
Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V)
Parameter
Limit
Min Typ Max
Write Cycles (1)
1,000,000 -
-
Data Retention (1)
40 - -
(1) Not 100% TESTED
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Power Source Voltage
VCC
Input Voltage
VIN
Rating
1.6 to 5.5
0 to Vcc
Unit
V
DC Characteristics (Unless otherwise specified, Ta= -40°C to +85°C, Vcc=1.6V to 5.5V)
Parameter
Symbol Min
Limit
Typ
Max
Unit
Conditions
Input High Voltage1
VIH1 0.7Vcc
- Vcc+1.0 V 1.7VVcc5.5V
Input Low Voltage1
VIL1 -0.3 (2)
- +0.3Vcc V 1.7VVcc5.5V
Input High Voltage2
VIH2 0.8Vcc
- Vcc+1.0 V 1.6VVcc1.7V
Input Low Voltage2
VIL2 -0.3 (2)
- +0.2Vcc V 1.6VVcc1.7V
Output Low Voltage1
VOL1
-
- 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA)
Output Low Voltage2
VOL2
-
- 0.2 V IOL=0.7mA, 1.6VVcc2.5V (SDA)
Input Leakage Current
ILI -1 - +1 µA VIN=0 to Vcc
Output Leakage Current
Supply Current (Write)
ILO -1
ICC1
-
Supply Current (Read)
ICC2
-
Standby Current
ISB
(2) When the pulse width is 50ns or less, it is -0.8V.
-
- +1 µA VOUT=0 to Vcc (SDA)
-
2.0
mA
Vcc=5.5V, fSCL=400kHz, tWR=5ms,
Byte write, Page write
-
0.5
mA
Vcc=5.5V, fSCL=400kHz
Random read, current read, sequential read
-
2.0
µA
Vcc=5.5V, SDASCL=Vcc
A0,A1,A2=GND,WP=GND
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/35
TSZ02201-0R2R0G100100-1-2
31.Aug.2017 Rev.006


Part Number BR24T08FVJ-W
Description I2C BUS EEPROM
Maker ROHM
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