Datasheet4U Logo Datasheet4U.com

SXB4089Z - MEDIUM POWER HBT AMPLIFIER

General Description

RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package.

Key Features

  • On-Chip Active Bias Control, Single 5V Supply.
  • High Output 3rd Order Intercept:.
  • +45dBm Typ.
  • High P1dB: +28dBm Typ.
  • High Gain: +20dB at 880MHz.
  • Low RTH: 25°C/W Typ.
  • Robust 2000V ESD, Class 2.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier SXB4089Z 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.