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SXB-4089Z - Medium Power InGaP/GaAs HBT Amplifier

Download the SXB-4089Z datasheet PDF. This datasheet also covers the SXB-4089 variant, as both devices belong to the same medium power ingap/gaas hbt amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package.

Features

  • On-chip Active Bias Control, Single 5V Supply.
  • High Output 3rd Order Intercept: +45 dBm typ.
  • High P1dB : +28 dBm typ.
  • High Gain: +20 dB at 880 MHz.
  • Low Rth: 25°C/W typ.
  • Robust 2000V ESD, Class 2 50 45 40 35 Typical IP3, P1dB, Gain OIP3 P1dB Gain dBm 30 25 20 15 10 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SXB-4089_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SXB-4089Z
Manufacturer Sirenza Microdevices
File Size 204.99 KB
Description Medium Power InGaP/GaAs HBT Amplifier
Datasheet download datasheet SXB-4089Z Datasheet

Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
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