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SXB2089Z - MEDIUM POWER HBT AMPLIFIER

General Description

RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package.

Key Features

  • High OIP3:+43dBm at 1960 MHz.
  • P1dB:24dBm.
  • High Linearity/ACP Perfor- mance.
  • Robust 2000V ESD, Class 2.
  • SOT-89 Package.

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Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SXB4089Z MEDIUM POWER HBT AMPLIFIER

Full PDF Text Transcription (Reference)

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SXB2089Z 5MHz to 2500 MHz Medium Power InGaP/GaAs HBT Amplifier SXB2089Z 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5MHz to 2500MHz Cellular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it an ideal choice for multi-carrier as well as digital applications.