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SXA389BZ - MEDIUM POWER GaAs HBT AMPLIFIER

General Description

tic package.

Key Features

  • Lower RTH for increased MTTF 108 Hours at TLead=85C.
  • On-Chip Active Bias Control, Single 5V Supply.
  • Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz.
  • High P1dB :+25dBm Typ.
  • High Gain:+18.5dB at 850MHz.
  • Efficient: Consumes Only 575 mW.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SXA389BZ 400MHz to 2500 MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias SXA389BZ 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package. These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are spe- cially designed for use as driver devices for infrastructure equipment in the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.