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SXA389BZ Datasheet, RF Micro Devices

SXA389BZ amplifier equivalent, medium power gaas hbt amplifier.

SXA389BZ Avg. rating / M : 1.0 rating-14

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SXA389BZ Datasheet

Features and benefits


* Lower RTH for increased MTTF 108 Hours at TLead=85C
* On-Chip Active Bias Control, Single 5V Supply
* Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz
*.

Application

Its high linearity makes it an ideal choice for multi-carrier as well as digital Optimum Technology applications. Mat.

Description

RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package. These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produ.

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TAGS

SXA389BZ
MEDIUM
POWER
GaAs
HBT
AMPLIFIER
RF Micro Devices

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