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SGB2400 - DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER

General Description

RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry.

The active bias network provides stable current over temperature and process Beta variations.

The SGB2400 is designed to operate directly from a 3V supply.

Key Features

  • High Reliability SiGe HBT Technology.
  • Robust Class 1C ESD.
  • P1dB = 6.9dBm at 1950MHz.
  • IP3 = 18.0dBm at 1950MHz.
  • Die Size: 0.75mm x 0.70mm.

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SGB2400DC to 4GHz Active Bias SiGe HBT MMIC Amplifier SGB2400 DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER Package: Bare Die Product Description RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The SGB2400 product is designed for high linearity 3V gain block applications that require small size and minimal external components. The die is internally matched to 50. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification.