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SGB2400 Datasheet, RF Micro Devices

SGB2400 amplifier equivalent, dc to 4ghz active bias sige hbt mmic amplifier.

SGB2400 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 113.83KB)

SGB2400 Datasheet

Features and benefits


* High Reliability SiGe HBT Technology
* Robust Class 1C ESD
* P1dB = 6.9dBm at 1950MHz
* IP3 = 18.0dBm at 1950MHz
* Die Size: 0.75mm x 0.70mm Applica.

Application

that require small size and minimal external components. The die is internally matched to 50. RFMD can provide 100% DC.

Description

RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations. The SGB2400 is designed to operate directly from.

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TAGS

SGB2400
4GHz
ACTIVE
BIAS
SiGe
HBT
MMIC
AMPLIFIER
RF Micro Devices

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