SGB-2233 Datasheet | RF Micro Devices

Description RFMD’s SGB-2233 is a high performance Si Ge HBT MMIC amplifier utilizing a Dar- lington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as pared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external ponents. It is on chip matched to 50Ω and an exter Optimum Technology nal bias inductor choke is required for the application band. Matching® Applied Vbias NC NC VCC Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS 9 Si Ge HBT Ga As p HEMT Active NC Bias NC NC Si CMOS RFIN RFOUT Si BJT Ga N HEMT In P HBT RF MEMS LDMOS Features - High Reliability Si Ge HBT...