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RFAM3790

RFAM3790 is EDGE QAM INTEGRATED AMPLIFIER manufactured by RF Micro Devices.
RFAM3790 datasheet preview

RFAM3790 Datasheet

Part number RFAM3790
Download RFAM3790 Datasheet (PDF)
File Size 287.73 KB
Manufacturer RF Micro Devices
Description EDGE QAM INTEGRATED AMPLIFIER
RFAM3790 page 2 RFAM3790 page 3

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RFAM2790 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier

RFAM3790 Description

RFAM3790 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER The RFAM3790 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable.

RFAM3790 Key Features

  • Excellent Linearity
  • Extremely High Output Capability
  • Voltage Controlled Attenuator
  • Power Enable Featrure
  • Extremely Low Distortion
  • Optimal Reliability
  • Low Noise
  • Unconditionally Stable Under all
  • 27.5 dB Typical Gain at 1218MHz
  • 410mA Typical at 12VDC

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