RFAM3790
RFAM3790 is EDGE QAM INTEGRATED AMPLIFIER manufactured by RF Micro Devices.
feature
, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.
Power Enable
V+
INPUT
OUTPUT
Preamp
Driver
Att. adjust Functional Block Diagram
Ordering Information
RFAM3790SB RFAM3790SQ RFAM3790SR RFAM3790TR7 RFAM3790TR13 RFAM3790PCBA-410 RFAM3790PCK-410
Sample bag with 5 pieces Sample bag with 25 pieces 7” Reel with 100 pieces 7” Reel with 250 pieces 13” Reel with 750 pieces Fully Assembled Evaluation Board Fully Assembled Evaluation Board with Sample Bag
Package: 9 pin, 11.0 mm x 11.0 mm x 1.375mm
Features
- Excellent Linearity
- Extremely High Output Capability
- Voltage Controlled Attenuator
- Power Enable Featrure
- Extremely Low Distortion
- Optimal Reliability
- Low Noise
- Unconditionally Stable Under all
Terminations
- 27.5 d B Typical Gain at 1218MHz
- 410m A Typical at 12VDC
Applications
- 45MHz to 1218MHz Downstream
Edge QAM RF Modulators
- Headend Equipment
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd..
DS140820
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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Absolute Maximum Ratings
Parameter DC Supply Over-Voltage (5 minutes) Storage Temperature Operating Mounting Base Temperature Moisture Sensitivity Level IPC/JEDEC J-STD-20
Rating 14
-40 to +100 -30 to +100 MSL 3 @260
Unit V °C °C °C
Caution! ESD sensitive device.
Ro HS status based on EU Directive...