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RFAM2790 - 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier

Description

The RFAM2790 is an integrated edge QAM amplifier module.

The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1003MHz.

Features

  • Excellent Linearity.
  • Extremely High Output Capability.
  • Voltage Controlled Attenuator.
  • Power Enable Feature.
  • Optimal Reliability.
  • Low Noise.
  • Unconditionally Stable Under all Terminations.
  • 27dB Typical Gain at 1003MHz.
  • 410mA Typical at 12VDC.

📥 Download Datasheet

Datasheet Details

Part number RFAM2790
Manufacturer RF Micro Devices
File Size 262.86 KB
Description 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier
Datasheet download datasheet RFAM2790 Datasheet

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Other Datasheets by RF Micro Devices

Part Number Description
RFAM3790 EDGE QAM INTEGRATED AMPLIFIER

Full PDF Text Transcription

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RFAM2790 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier RFAM2790 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier Package: 9-pin, 11.0mm x 11.0mm x 1.375mm POWER ENABLE V+ Features  Excellent Linearity  Extremely High Output Capability  Voltage Controlled Attenuator  Power Enable Feature  Optimal Reliability  Low Noise  Unconditionally Stable Under all Terminations  27dB Typical Gain at 1003MHz  410mA Typical at 12VDC Applications  45MHz to 1003MHz Downstream Edge QAM RF Modulators  Headend Equipment INPUT OUTPUT Preamp Driver ATTENUATOR ADJUST Functional Block Diagram Product Description The RFAM2790 is an integrated edge QAM amplifier module.
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