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SBA4089Z Datasheet Preview

SBA4089Z Datasheet

CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

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SBA4089ZSBA4089Z
DCto5GHz, CASCADABLE InGaP/GaAs HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0
Gain and Return Loss vs Frequency
S21
S22
S11
12 34 5
Frequency (GHz)
6
Features
IP3=33.5dBm at 1950MHz
POUT=13.3dBm at -45dBc
ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Terminals
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
13.5
15.0
16.5 dB 850MHz
13.1 14.6 16.1 dB 1950MHz
Output Power at 1dB Compression
19.2
dBm
850 MHz
17.5 19.0
dBm
1950 MHz
Output Third Order Intercept Point
36.5
dBm
850 MHz
31.5
33.5
dBm
1950 MHz
Output Power
13.3
dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth
4400
MHz Return Loss>10dB
Input Return Loss
14.0
21.0
dB 1950MHz
Output Return Loss
11.0
15.0
dB 1950MHz
Noise Figure
4.8 5.8 dB 1950MHz
Device Operating Voltage
4.8 5.0 5.4 V
Device Operating Current
72 80 88 mA
Thermal Resistance (junction to lead)
70
°C/W
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
DS111204
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6




RFMD

SBA4089Z Datasheet Preview

SBA4089Z Datasheet

CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

No Preview Available !

SBA4089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power
130 mA
6V
+17 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operating Dissipated Power
0.65
W
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100MHz 500MHz
850MHz 1950MHz 2400MHz
Small Signal Gain
Output Third Order Intercept
Point
dB
dBm
15.3
37.1
15.3
36.2
15.0
36.5
14.6
33.5
14.3
32.7
Output Power at 1dB
dBm
19.0
19.1
19.0
19.0
18.3
Compression
Input Return Loss dB 47 33 29 21 17.5
Output Return Loss
dB
22
22
21
15 13.3
Reverse Isolation dB 18
18 18.7 19
19
Noise Figure
dB 4.1
4.3
4.2
4.8
-
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
3500 MHz
13.2
30.5
16.3
13.3
12
19
-
Noise Figure vs Frequency
7.00
6.00
5.00
4.00
3.00
2.00
+25c
1.00
-40c
0.00 +85c
0 0.5 1 1.5 2 2.5 3 3.5
Frequency(GHz)
22
21
20
19
18
17
16
15
0
0.5
P1dB vs Frequency
40
38
36
34
32
30
28
26
24
22
20
0
0.5
+25c
-40c
+85c
1 1.5 2 2.5 3 3.5
Frequency (GHz)
OIP3 vs Frequency
1 1.5 2 2.5
Frequency (GHz)
+25c
-40c
+85c
3 3.5
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111204


Part Number SBA4089Z
Description CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
Maker RFMD
Total Page 6 Pages
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