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Sirenza Microdevices

SBA-5089 Datasheet Preview

SBA-5089 Datasheet

Cascadable InGaP/GaAs HBT MMIC Amplifier

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Product Description
Sirenza Microdevices’ SBA-5089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process technology
provides broadband performance up to 5 GHz with excellent
thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in higher
suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
no antimony trioxide nor halogenated fire retardants.
30
20
10
0
-10
-20
-30
-40
0
Gain & Return Loss
S21
S22
S11
1234
Frequency (GHz)
5
6
SBA-5089
SBA-5089Z Pb RoHS Compliant
& Green Package
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• IP3 = 34.0dBm @ 1950MHz
• Pout=13.0 dBm @-45dBc ACP IS-95 1950MHz
• Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Patented Thermal Design
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite Terminals
Sym bol
P a ra m e te r
U n its
F re q u e n c y
M in .
Ty p .
M ax.
G S m a ll S ig n a l G a in
dB
850 MHz
1950 MHz
1 8 .5
1 6 .5
2 0 .0
1 8 .0
2 1 .5
1 9 .5
P 1dB
O utp ut P o w e r a t 1 d B C o m p re s s io n
dB m
850 MHz
1950 MHz
1 8 .0
1 9 .7
1 9 .5
O IP 3
O u tp u t T h i r d O r d e r In te r c e p t P o i n t
dB m
850 MHz
1950 MHz
3 2 .0
3 6 .0
3 4 .0
P OUT
O u tp u t P o w e r @ - 4 5 d B c A C P IS - 9 5
9 F o rw a rd C h a n n e ls
dB m
1950 MHz
1 3 .0
B a nd w id th D e te rm in e d b y R e tu rn L o s s (> 1 0 d B )
M Hz
4400
IR L In p u t R e tu r n L o s s
dB
1950 MHz
1 4 .0
2 0 .0
ORL
O utp ut R e turn L o s s
d B 1 9 5 0 M H z 9 .0 11 .0
N F N o is e F ig ure
dB 1950 MHz
4 .5 5 .5
V D D e v ic e O p e ra tin g V o lta g e
V
4 .7 4 .9
5 .3
ID D e v i c e O p e r a ti n g C u r r e n t
mA
72 80 88
R TH , j-l
T h e rm a l R e s is ta n c e (ju n c tio n to le a d )
°C /W
70
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
ID = 80 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or and components and reflect the approximate performance
of the products as measured by those tests. Any difference in circuit implementation, test software or test equipment may affect actual performance. The information provided herein is believed to be reliable at press
time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’ products are subject
to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits
described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-102743 Rev. D




Sirenza Microdevices

SBA-5089 Datasheet Preview

SBA-5089 Datasheet

Cascadable InGaP/GaAs HBT MMIC Amplifier

No Preview Available !

SBA-5089 DC-5 GHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Symbol
Parameter
Unit 100
500
850
1950
2400
3500
G Small Signal Gain
dB 20.5 20.2 1F9.r9equency18(M.0Hz) 17.1 15.3
OIP3 Output Third Order Intercept Point dBm 36.3 35.8 36.0 34.0 32.7 30.9
P1dB Output Power at 1dB Compression dBm 19.8 19.8 19.7 19.5 18.8 17.1
IRL Input Return Loss
dB 29 27 25 20 17 11.8
ORL Output Return Loss
dB 27 21 17 11 11 11
S21 Reverse Isolation
NF Noise Figure
Test Conditions: VS = 8 V
RBIAS = 39 Ohms
dB 22
dB 4.1
ID = 80 mA Typ.
TL = 25ºC
22 23 23 23 23
4.3 4.2 4.5 ---- ----
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Test Conditions:
Noise Figure vs. Frequency
6
5
4
3 +25c
-40c
+85c
2
0 0.5 1 1.5 2
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max.
Device
Current
(I )
D
Max. Device Voltage (VD)
Max. RF Input Power
130 mA
6V
+17 dBm
Max Operating Dissipated
Power
0.65 W
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I V < (T - T ) / R , j-l
DD
JL
TH
T =T
L LEAD
OIP3 vs. Frequency
38 +25c
36 -40c
+85c
34
32
30
28
26
0 0.5 1 1.5 2 2.5 3 3.5
Frequency(GHz)
P1dBvs. Frequency
21
+25c
20 -40c
+85c
19
18
17
16
15
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102743 Rev. D


Part Number SBA-5089
Description Cascadable InGaP/GaAs HBT MMIC Amplifier
Maker Sirenza Microdevices
Total Page 5 Pages
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