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HT1818-15M - GaN Hybrid Power Amplifier

Description

The HT1818-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 to 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.

High In/Output impedance, High power density.

Features

  • E-pHEMT GaAs + GaN on SiC.
  • 2-Stage Amplifier 50ohms Matching.
  • Surface Mount Hybrid Type.
  • Small Size & Mass.
  • High Efficiency.

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Datasheet Details

Part number HT1818-15M
Manufacturer RFHIC
File Size 232.61 KB
Description GaN Hybrid Power Amplifier
Datasheet download datasheet HT1818-15M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary GaN Hybrid Power Amplifier HT1818-15M Product Features • E-pHEMT GaAs + GaN on SiC • 2-Stage Amplifier 50ohms Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency Applications • RF Sub-Systems • Base Station • Repeater • 4G/LTE system • Small cell Package Type : NP-1EL Description The HT1818-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 to 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds1 =5V, Vds2 =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX Frequency Range MHz 1805 - 1880 Power Gain - 34 - Gain Flatness dB - 0.8 1.
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