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HT0808-30A - GaN Hybrid Power Amplifier

Description

The HT0808-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.

High In/Output impedance, High power density.

Features

  • GaN on SiC HEMT.
  • In/Out Impedance Matching.
  • Surface Mount Hybrid Type.
  • Small Size & Mass.
  • High Efficiency.
  • Low Cost.
  • Custom design available.

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Datasheet Details

Part number HT0808-30A
Manufacturer RFHIC
File Size 262.54 KB
Description GaN Hybrid Power Amplifier
Datasheet download datasheet HT0808-30A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN Hybrid Power Amplifier HT0808-30A Product Features • GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • Low Cost • Custom design available Applications • RF Sub-Systems • Base Station • Repeater • LTE system Package Type : NP-1EL Description The HT0808-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX Frequency Range MHz 869 - 894 Power Gain 35 37 39 Gain Flatness dB - 0.3 1.
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