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GaN Hybrid Power Amplifier HT0808-15A
Product Features
• GaN on SiC HEMT • 2-Stage Amplifier 50ohms Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency
Applications
• RF Sub-Systems • Base Station • Repeater • 4G/LTE system • Small cell
Package Type : NP-1EL
Description
The HT0808-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP MAX
Frequency Range
MHz
869
-
894
Power Gain
34 37 39
Gain Flatness
dB -
0.6
-
Input Return Loss
- -10 -6.0
Pout @ Average
dBm
-
33
-
Pout @ Psat
dBm
40.8
41.
HT0808-15A Datasheet
