RCR1525SI transistor equivalent, p-channel enhancement mode field effect transistor.
VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON).
z General Description
This P-Channel enhance.
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipme.
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